2sc4203 2002-07-23 1 toshiba transistor silicon epitaxial planar type 2sc4203 video output for high definition vdt high speed switching applications high transition frequency: f t = 400 mhz (typ.) (v ce = 10 v, i c = 70 ma) low output capacitance: c ob < 5 pf (max) (v cb = 30 v) high voltage: v ceo = 150 v high power dissipation: p c = 10 w maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 150 v emitter-base voltage v ebo 5 v collector current (dc) i c 0.3 a collector current (pulse) i cp 0.5 a base current i b 0.2 a ta = 25c 1.0 power dissipation tc = 25c p c 10 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c unit: mm jedec D jeita D toshiba 2-7b1a weight: 0.36 g (typ.) jedec D jeita D toshiba 2-7b2a weight: 0.36 g (typ.)
2sc4203 2002-07-23 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 150 v, i e = 0 D D 10 a emitter cut-off current i ebo v eb = 5 v, i c = 0 D D 10 a collector-emitter breakdown voltage v (br) ceo i c = 1 ma, i b = 0 150 D D v h fe (1) v ce = 10 v, i c = 50 ma 40 D 240 dc current gain h fe (2) v ce = 10 v, i c = 200 ma 20 D D collector-emitter saturation voltage v ce (sat) i c = 200 ma, i b = 20 ma D D 2.0 v base-emitter saturation voltage v be (sat) i c = 200 ma, i b = 20 ma D D 1.5 v transition frequency f t v ce = 10 v, i c = 70 ma 300 400 D mhz collector output capacitance c ob v cb = 30 v, f = 1 mhz, i e = 0 D 4.0 5.0 pf marking explanation of lot no. month of manufacture: january to december are denoted by letters a to l respectively. year of manufacture: last decimal digit of the year of manufacture c4203 product no. lot no.
2sc4203 2002-07-23 3 h fe ? i c h fe ? i c i c ? v ce v be ? i c collector-emitter voltage v ce (v) collector current i c ( a) base-emitter voltage v be (v) collector current i c ( a) collector current i c (ma) dc current gain h fe collector current i c (ma) dc current gain h fe collector current i c (ma) collector-emitter saturation voltage v ce (sat) (v) collector current i c (ma) collector-emitter saturation voltage v ce (sat) (v) common emitter tc = 25c 0 0 240 40 i b = 0.1 ma 80 120 160 20 40 60 80 100 120 0.2 140 200 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 common emitter tc = 2 5 c 0 0.4 500 100 200 300 400 0.5 0.6 0.7 0.8 0.9 1.0 tc = 100c 25 ? 25 0.1 100 300 1 3 30 300 1000 50 common emitter tc = 25c v ce = 20 v 5 10 100 10 0.3 30 0.1 100 300 1 3 30 300 1000 50 common emitter v ce = 10 v 100 10 0.3 30 tc = 100c 25 ? 25 v ce (sat) ? i c v ce (sat) ? i c i c /i b = 20 0.1 0.3 3 1 3 30 300 1000 0.1 common emitter tc = 25c 100 10 0.3 0.03 0.05 0.5 1 10 5 0.1 0.3 3 1 3 30 300 1000 0.1 common emitter i c /i b = 10 100 10 0.3 0.03 0.05 0.5 1 tc = 100c 25 ? 25
2sc4203 2002-07-23 4 f t ? i c v be (sat) ? i c collector current i c (ma) base-emitter saturation voltage v be (sat) (v) transition frequency f t (mhz) collector current i c (ma) collector-base voltage v cb (v) collector output capacitance c ob (pf) c ob ? v cb ambient temperature ta (c) p c ? ta collector power dissipation p c (w) i c /i b = 20 0.1 3 1 3 30 300 1000 common emitter tc = 25c 100 10 0.3 0.3 0.5 1 10 5 10 1 3 10 30 100 300 30 50 100 300 500 common emitter tc = 25c v ce = 10 v 5 3 30 5 10 1 10 30 100 3 1 i e = 0 f = 1 mhz tc = 25c 12 0 0 (1) tc = ta infinite heat sink (2) no heat sink 20 40 60 80 120 140 160 2 4 6 8 10 (1) (2) 100
2sc4203 2002-07-23 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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